IRFR48ZPBF Description
The IRFR48ZPBF is a single channel HEXFET? Power MOSFET that provides extremely low on-resistance per silicon area thanks to its use of the most advanced processing techniques. Additionally, this design features an operating junction temperature of 175°C, rapid switching speeds, and improved repetitive avalanche ratings. Featuring a variety of features, this device is extremely efficient and reliable for a wide variety of applications.
IRFR48ZPBF Features
Advanced process technology
Ultra-low on-resistance
Repetitive avalanche allowed up to Tjmax
175°C Operating temperature
Capable of being wave-soldered
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level: Optimized for 10 V gate drive voltage
Industry-standard surface-mount power package
IRFR48ZPBF Applications
Power Management
Audio
Industrial
