IRFR2307Z Description
This HEXFET? Power MOSFET is specifically intended for Automotive applications and uses the newest processing techniques to provide incredibly low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a very efficient and dependable device for usage in automotive and other applications.
IRFR2307Z Features
Advanced Process Technology
Ultra-Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax