IRFR12N25D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFR12N25D Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2001
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
144W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
260m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
810pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
RoHS Status
Non-RoHS Compliant
In-Stock:1434 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
300
$2.03500
$610.5
IRFR12N25D Product Details
IRFR12N25D Description
IRFR12N25D is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 250V. The operating temperature of the IRFR12N25D is -55°C~175°C TJ and its maximum power dissipation is 144W Tc. IRFR12N25D has 3 pins and it is available in Tube packaging way.
IRFR12N25D Features
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRFR12N25D Applications
High frequency DC-DC converters
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