IRFR1010Z Description
This IRFR1010Z HEXFET? Power MOSFET employs cutting-edge processing techniques to deliver ultra-low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device for a wide range of applications.
IRFR1010Z Features
Technology for Advanced Processes
On-Resistance is really low.
Operating Temperature: 175°C
Quick Switching
Avalanche Repetitive Tjmax is allowed.
IRFR1010Z Applications
IRFR1010Z is intended for general use and can be used in a variety of situations.
