Name: IRFP150N
Brand: Infineon Technologies
SKU: IRFP150N
Availability: InStock

new-10%

IRFP150N

Manufacturer part number:IRFP150N

Manufacturer:Infineon Technologies

Description:IRFP150N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFP150N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Bulk
Published	1998
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, FAST SWITCHING
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	160W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 23A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-247AC
Drain Current-Max (Abs) (ID)	42A
Drain-source On Resistance-Max	0.036Ohm
Pulsed Drain Current-Max (IDM)	140A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	420 mJ
RoHS Status	Non-RoHS Compliant

IRFP150N Product Details

IRFP150N Description

With a voltage of 100V, the IRFP150N is a HEXFET Power MOSFET from Infineon Technologies. International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The TO-247 package is recommended for commercial and industrial applications where TO-220 devices are not suitable. Because of its isolated mounting hole, the TO-247 is similar to but superior to the older TO-218 package.