IRFBA1404P Description
Modern processing methods are used in this Stripe Planar design of HEXFET? Power MOSFETs to produce extraordinarily low on-resistance per silicon area. This MOSFET also has a junction operating temperature of 175 oC, quick switching times, and better robustness in single- and repeated-avalanche situations. The Super-220 TM is a package that can accommodate a significantly larger silicon die while maintaining the same mechanical form and pinout as the industry standard TO-220. As a result, the TO-220 and the much larger TO-247 packages both have significantly improved current handling capabilities.
IRFBA1404P Features
Advanced Process Technology
Ultra Low On-Resistance
Increase Current Handling Capability
175°C Operating Temperature
Fast Switching
Dynamic dv/dt Rating
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRFBA1404P Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
