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IRFB4620PBF

IRFB4620PBF

IRFB4620PBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 72.5m Ω @ 15A, 10V ±20V 1710pF @ 50V 38nC @ 10V TO-220-3

SOT-23

IRFB4620PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series HEXFET®
Published 2008
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 72.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 144W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation144W
Turn On Delay Time13.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 50V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time22.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14.8 ns
Turn-Off Delay Time 25.4 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Nominal Vgs 3 V
Height 9.02mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2599 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.61000$2.61
10$2.35600$23.56
100$1.89340$189.34
500$1.47262$736.31

IRFB4620PBF Product Details

IRFB4620PBF Description


IRFB4620PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of IRFB4620PBF is -55°C~175°C TJ and its maximum power dissipation is 144W. IRFB4620PBF has 3 pins and it is available in Tube packaging way. The Turn-On Delay Time of IRFB4620PBF is 13.4 ns and its Turn-Off Delay Time is 25.4 ns.



IRFB4620PBF Features


  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Enhanced body diode dV/dt and dI/dt Capability

  • Lead-Free



IRFB4620PBF Applications


  • High Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High Speed Power Switching

  • Hard Switched and High Frequency Circuits


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