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IRF8736PBF

IRF8736PBF

IRF8736PBF

Infineon Technologies

IRF8736PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF8736PBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2007
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 4.8MOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2315pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 24 ns
Nominal Vgs 1.8 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4720 items

IRF8736PBF Product Details

IRF8736PBF Description


The IRF8736PBF is a 30V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRF8736PBF is in the SOIC-8 package with 2.5W power dissipation.



IRF8736PBF Features


  • Very Low RDS(on) at 4.5V VGS

  • Low Gate Charge

  • Fully Characterized Avalanche Voltage and Current

  • 100% Tested for RG

  • Lead -Free



IRF8736PBF Applications


  • Power Management

  • Computers & Computer Peripherals

  • Notebook Processor Power

  • Isolated DC-DC Converters in Networking Systems


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