IRF8707PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF8707PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
11.9MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
6.7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11.9m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 15V
Current - Continuous Drain (Id) @ 25°C
11A Ta
Gate Charge (Qg) (Max) @ Vgs
9.3nC @ 4.5V
Rise Time
7.9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4.4 ns
Turn-Off Delay Time
7.3 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Avalanche Energy Rating (Eas)
53 mJ
Recovery Time
18 ns
Nominal Vgs
1.8 V
Height
1.5mm
Length
5mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4342 items
IRF8707PBF Product Details
IRF8707PBF Description
The IRF8707PBF is an N-channel Power MOSFET incorporating the latest HEXFET? power MOSFET silicon technology into the industry-standard SO-8 package. The IRF8707PBF has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make the IRF8707PBF ideal for high-efficiency DC-DC converters that power the latest generation of processors.
IRF8707PBF Features
Very Low Gate Charge
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
100% tested for Rg
Lead-Free
IRF8707PBF Applications
Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
Control MOSFET for Isolated DC-DC Converters in Networking Systems
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