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IRF7832ZTR

IRF7832ZTR

IRF7832ZTR

Infineon Technologies

MOSFET N-CH 30V 21A 8-SOIC

SOT-23

IRF7832ZTR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3860pF @ 15V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:4640 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About IRF7832ZTR

The IRF7832ZTR from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 21A 8-SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF7832ZTR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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