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IRF7807VD2TR

IRF7807VD2TR

IRF7807VD2TR

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

SOT-23

IRF7807VD2TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2001
Series FETKY™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±20V
FET Feature Schottky Diode (Isolated)
RoHS StatusNon-RoHS Compliant
In-Stock:2836 items

About IRF7807VD2TR

The IRF7807VD2TR from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 8.3A 8-SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF7807VD2TR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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