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IRF7807VD1TR

IRF7807VD1TR

IRF7807VD1TR

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

SOT-23

IRF7807VD1TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
Series FETKY™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 2.5W Ta
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 8.3A
FET Feature Schottky Diode (Isolated)
RoHS StatusNon-RoHS Compliant
In-Stock:3088 items

About IRF7807VD1TR

The IRF7807VD1TR from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 8.3A 8-SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF7807VD1TR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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