IRF7748L1TRPBF Description
The IRF7748L1TRPbF combines the most recent HEXFET® Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging to provide a package with a footprint smaller than a D2PAK and only a 0.7 mm profile that has the lowest on-state resistance. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, which maximizes heat transmission in power systems. Applications requiring synchronous rectification and high frequency switching are best served by the IRF7748L1TRPbF. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters.
IRF7748L1TRPBF Features
Rds On (Max) @ Id, Vgs: 2.2m Ω @ 89A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Drain to Source Voltage (Vdss): 60V
Turn-Off Delay Time: 54 ns
IRF7748L1TRPBF Applications
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
