Name: IRF7526D1
Brand: Infineon Technologies
SKU: IRF7526D1
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	FETKY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	1.25W Ta
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	200m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	2A
FET Feature	Schottky Diode (Isolated)
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

IRF7526D1 Product Details

IRF7526D1 Description

IRF7526D1 is a -30V FETKY - MOSFET and Schottky Diode manufactured by Infineon. The Infineon IRF7526D1 utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phones, PDAs, etc. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRF7526D1 is in the Micro8TM package with 1.25w power dissipation.