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IRF7503TRPBF

IRF7503TRPBF

IRF7503TRPBF

Infineon Technologies

IRF7503TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7503TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 135mOhm
Additional FeatureULTRA LOW RESISTANCE
Voltage - Rated DC 30V
Max Power Dissipation1.25W
Terminal FormGULL WING
Current Rating2.4A
Base Part Number IRF7503PBF
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.25W
Turn On Delay Time4.7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time10ns
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 2.4A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 14A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 860μm
Length 3mm
Width 3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9129 items

Pricing & Ordering

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IRF7503TRPBF Product Details

IRF7503TRPBF Description


International Rectifier's Fifth Generation HEXFETs employ cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This benefit gives the designer a highly effective and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The new Micro8 package offers the smallest footprint of any SOIC design, with a footprint area that is half that of the traditional SO-8. Since printed circuit board space is at a premium in these applications, the Micro8 is the perfect device. The Micro8 will readily fit into extremely small application contexts like portable electronics and PCMCIA cards thanks to its tiny profile (1.1mm).



IRF7503TRPBF Features


? Technology Generation No Logic


? Lowest On-Resistance Ever


? MOSFETs with two N-channels.


? Small SOIC Packages


? Small Profile (1.1mm)


? Available on reel-to-reel tape


? Quick Switching


? Lead-Free



IRF7503TRPBF Applications


Switching applications


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