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IRF7433

IRF7433

IRF7433

Infineon Technologies

IRF7433 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7433 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2007
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 24mOhm @ 8.7A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1877pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
RoHS StatusNon-RoHS Compliant
In-Stock:1248 items

IRF7433 Product Details

IRF7433 Description


These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.



IRF7433 Features


  • Ultra Low On-Resistance

  • P-Channel MOSFET

  • Surface Mount

  • Available in Tape & Reel



IRF7433 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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