Name: IRF7420PBF
Brand: Infineon Technologies
SKU: IRF7420PBF
Availability: InStock

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IRF7420PBF

Manufacturer part number:IRF7420PBF

Manufacturer:Infineon Technologies

Description:IRF7420PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7420PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	14MOhm
Voltage - Rated DC	-12V
Technology	MOSFET (Metal Oxide)
Current Rating	-11.5A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	8.8 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	14m Ω @ 11.5A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3529pF @ 10V
Current - Continuous Drain (Id) @ 25°C	11.5A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 4.5V
Rise Time	8.8ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	225 ns
Turn-Off Delay Time	291 ns
Continuous Drain Current (ID)	-11.5A
Threshold Voltage	-900mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Dual Supply Voltage	-12V
Nominal Vgs	-900 mV
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRF7420PBF Product Details

IRF7420PBF Description

The exceptionally low on-resistance per silicon area of these P-Channel HEXFET Power MOSFETs from International Rectifier is made possible by cutting-edge manufacturing procedures. This advantage gives the designer access to a highly effective tool for use in load and battery management applications.

The SO-8 has been altered by way of a unique leadframe, resulting in improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering.