IRF6717MTR1PBF Description
The IRF6717MPbF combines the latest HEXFET? Power MOSFET Silicon technology with innovative DirectFETTM packaging to produce the lowest on-state resistance in a SO-8-sized device with a 0.7 mm profile. When application note AN-1035 addressing manufacturing methods and procedures is followed, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling in power systems, resulting in an 80 percent increase in thermal resistance over the previous best.
IRF6717MTR1PBF Features
RoHs Compliant and Halgen Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
100% Rg tested
IRF6717MTR1PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
