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IRF6708S2TRPBF

IRF6708S2TRPBF

IRF6708S2TRPBF

Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET-LV

SOT-23

IRF6708S2TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric S1
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2011
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 20W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.9m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:3197 items

About IRF6708S2TRPBF

The IRF6708S2TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 13A DIRECTFET-LV.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6708S2TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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