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IRF6678TRPBF

IRF6678TRPBF

IRF6678TRPBF

Infineon Technologies

MOSFET N-CH 30V 30A DIRECTFET

SOT-23

IRF6678TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating30A
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation89W
Case Connection DRAIN
Turn On Delay Time21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5640pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 4.5V
Rise Time71ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.1 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 210 mJ
Nominal Vgs 2.25 V
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2928 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.416442$0.416442
10$0.392870$3.9287
100$0.370632$37.0632
500$0.349653$174.8265
1000$0.329861$329.861

About IRF6678TRPBF

The IRF6678TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 30A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6678TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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