Name: IRF6665
Brand: Infineon Technologies
SKU: IRF6665
Availability: InStock

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IRF6665

Manufacturer part number:IRF6665

Manufacturer:Infineon Technologies

Description:IRF6665 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6665 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SH
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Silver/Nickel (Ag/Ni)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XBCC-N3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	62m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	4.2A
Drain-source On Resistance-Max	0.062Ohm
Pulsed Drain Current-Max (IDM)	34A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	11 mJ
RoHS Status	Non-RoHS Compliant

IRF6665 Product Details

IRF6665 Description

IRF6665 is a type of digital audio MOSFET provided by Infineon Technologies utilizing the latest Silicon technology for low on-resistance per silicon area. It is able to provide improved efficiency based on low RDS (on), better THD on the basis of low QG and QSW, and lower EMI due to its low QRR. Based on these characteristics, it is well suited for Class-D audio amplifier applications.