IRF6648TR1PBF Description
The IRF6648PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET? package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infra-red, or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET? package allows dual-sided cooling to maximize thermal transfer in power systems, improving the previous best thermal resistance by 80%.
IRF6648TR1PBF Features
RoHS Compliant
Lead-Free (Qualified up to 260??C Reflow)
Application Specific MOSFETs
Optimized for Synchronous Rectification for
5V to 12V outputs
Low Conduction Losses
Ideal for 24V input Primary Side Forward Converters
Low Profile (<0.7mm)
Dual-Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
