Name: IRF6616TR1PBF
Brand: Infineon Technologies
SKU: IRF6616TR1PBF
Availability: InStock

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IRF6616TR1PBF

Manufacturer part number:IRF6616TR1PBF

Manufacturer:Infineon Technologies

Description:IRF6616TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6616TR1PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	5MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Power Dissipation	2.8W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3765pF @ 20V
Current - Continuous Drain (Id) @ 25°C	19A Ta 106A Tc
Gate Charge (Qg) (Max) @ Vgs	44nC @ 4.5V
Rise Time	19ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.4 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	15A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Dual Supply Voltage	40V
Input Capacitance	3.765nF
Recovery Time	23 ns
Drain to Source Resistance	6.2mOhm
Rds On Max	5 mΩ
Nominal Vgs	1.8 V
Height	508μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRF6616TR1PBF Product Details

IRF6616TR1PBF Description

IRF6616TR1PBF is a kind of HEXFET? power MOSFET integrating the latest Silicon technology with the advanced DirectFETTM packaging. It is able to provide low resistance and low charge, and ultra-low package inductance for reduced conduction and switching losses. Power MOSFET IRF6616TR1PBF is optimized for high-efficiency DC-DC converters, synchronous rectification, and high-frequency switching.