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IRF6602

IRF6602

IRF6602

Infineon Technologies

MOSFET N-CH 20V 11A DIRECTFET

SOT-23

IRF6602 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MQ
Supplier Device Package DIRECTFET™ MQ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.3W Ta 42W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta 48A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:1346 items

About IRF6602

The IRF6602 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 20V 11A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6602, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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