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IRF6601

IRF6601

IRF6601

Infineon Technologies

MOSFET N-CH 20V 26A DIRECTFET

SOT-23

IRF6601 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MT
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.6W Ta 42W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 15V
Current - Continuous Drain (Id) @ 25°C 26A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:1843 items

About IRF6601

The IRF6601 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 20V 26A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6601, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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