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IRF630NL

IRF630NL

IRF630NL

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-262

SOT-23

IRF630NL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 82W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.3A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:1205 items

Pricing & Ordering

QuantityUnit PriceExt. Price
50$2.40620$120.31

About IRF630NL

The IRF630NL from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 9.3A TO-262.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF630NL, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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