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IRF6215L-103

IRF6215L-103

IRF6215L-103

Infineon Technologies

MOSFET P-CH 150V 13A TO262

SOT-23

IRF6215L-103 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
PackagingTube
Published 1998
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 110W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 290m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:3951 items

About IRF6215L-103

The IRF6215L-103 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 150V 13A TO262.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6215L-103, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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