IRF5800 Description
The extraordinarily low on-resistance per silicon area of these P-channel MOSFETs from International Rectifier is made possible by the use of cutting-edge manufacturing processes. This advantage gives the designer access to a highly effective tool for use in load and battery management applications. The RDS(on) of a HEXFET? power MOSFET produced by the TSOP-6 packaging with its specialized leadframe is 60% lower than that of an equivalent-sized SOT-23. For situations where printed circuit board space is at a premium, this package is perfect. When compared to the SOT-23, its special thermal design and reduced RDS(on) allow for a nearly 300 percent boost in current handling.
IRF5800 Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
IRF5800 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
