Name: IRF540NPBF
Brand: Infineon Technologies
SKU: IRF540NPBF
Price: 1.35000 USD
Availability: InStock

new-10%

IRF540NPBF

Manufacturer part number:IRF540NPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 44m Ω @ 16A, 10V ±20V 1960pF @ 25V 71nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IRF540NPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	1997
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	44MOhm
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
Current Rating	27A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	130W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	130W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	44m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1960pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	33A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Recovery Time	170 ns
Nominal Vgs	4 V
Height	8.77mm
Length	10.54mm
Width	4.69mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRF540NPBF Product Details

IRF540NPBF Description

International Rectifier's advanced HEXFET power MOSFET RF540NPBFuses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. TO-220 packages are generally suitable for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted in the whole industry because of its low thermal resistance and low packaging cost.