Name: IRF5305SPBF
Brand: Infineon Technologies
SKU: IRF5305SPBF
Availability: InStock

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IRF5305SPBF

Manufacturer part number:IRF5305SPBF

Manufacturer:Infineon Technologies

Description:IRF5305SPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF5305SPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 110W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252
Drain Current-Max (Abs) (ID)	31A
Drain-source On Resistance-Max	0.06Ohm
Pulsed Drain Current-Max (IDM)	110A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	280 mJ
RoHS Status	ROHS3 Compliant

IRF5305SPBF Product Details

IRF5305SPBF Description

The IRF5305SPBF is a -55V single P-channel HEXFET? Power MOSFET, fifth generation HEXFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.