Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF200P222

IRF200P222

IRF200P222

Infineon Technologies

IRF200P222 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF200P222 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
Series StrongIRFET™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 556W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation556W
Case Connection DRAIN
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 82A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 9820pF @ 50V
Current - Continuous Drain (Id) @ 25°C 182A Tc
Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 182A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0066Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 728A
Max Junction Temperature (Tj) 175°C
Height 24.99mm
RoHS StatusROHS3 Compliant
In-Stock:585 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.18000$9.18
10$8.32800$83.28
400$6.43750$2575
800$5.50938$4407.504

IRF200P222 Product Details

IRF200P222 Description


IRF200P222 features enhanced gate, avalanche, and dynamic dv/dt ruggedness, as well as fully described capacitance and avalanche SOA.


IRF200P222 Features


Improved Gate, Avalanche and Dynamic dv/dt Ruggedness.

Fully Characterized Capacitance and Avalanche SOA.

Enhanced body diode dv/dt and di/dt Capability.

Lead-Free; RoHS Compliant; Halogen-Free.


IRF200P222 Applications


Applications for UPS and inverters.

Topologies of half-bridge and full-bridge.

Power supplies in resonant mode.

Converters (DC/DC and AC/DC).

OR-ing and power switch redundancy.

Circuits powered by batteries.


Get Subscriber

Enter Your Email Address, Get the Latest News