Name: IRF1404L
Brand: Infineon Technologies
SKU: IRF1404L
Availability: InStock

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IRF1404L

Manufacturer part number:IRF1404L

Manufacturer:Infineon Technologies

Description:IRF1404L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF1404L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
Series	HEXFET®
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	225
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 200W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	162A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.004Ohm
Pulsed Drain Current-Max (IDM)	650A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	519 mJ
RoHS Status	Non-RoHS Compliant

IRF1404L Product Details

IRF1404L Description

Seventh Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device for use in a wide variety of applications.