IR2110S Description
A high-performance MOSFET driver IC from Infineon Technologies, the IR2110S, is created to deliver low-delay, high current pulses to improve the switching performance of high-power semiconductor switches such IGBTs, MOSFETs, SiCs, and GaN HEMTs. The IC is specifically made for use in industrial high-voltage applications where quick switching times, little dead time, and great noise immunity are required. The IR2110S is perfect for high voltage applications because it offers a voltage range of up to 600V. It can drive big capacitances at high frequency effectively since it can deliver output currents up to 2A peak. The design of gate driver circuits is further made simpler by the on-chip integration of bootstrap diodes, resulting in simplified PCB layouts and a lower component count.
IR2110S Features
IR2110S Applications
