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IR2011

IR2011

IR2011

Infineon Technologies

Through Hole Tube Obsolete EAR99 Gate Drivers ICs Inverting 2 200V V 8-DIP (0.300, 7.62mm) IR2011 High-Side or Low-Side

SOT-23

IR2011 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Surface MountNO
Operating Temperature-40°C~150°C TJ
PackagingTube
Published 1996
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology CMOS
Voltage - Supply 10V~20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 15V
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IR2011
JESD-30 Code R-PDIP-T8
Qualification StatusNot Qualified
Input Type Inverting
Rise / Fall Time (Typ) 35ns 20ns
Interface IC Type HALF BRIDGE BASED MOSFET DRIVER
Channel Type Independent
Number of Drivers 2
Output Peak Current Limit-Nom 1A
Driven Configuration High-Side or Low-Side
Gate Type N-Channel MOSFET
Current - Peak Output (Source, Sink) 1A 1A
High Side Driver YES
Logic Voltage - VIL, VIH 0.7V 2.2V
High Side Voltage - Max (Bootstrap) 200V
Height Seated (Max) 5.33mm
Length 9.88mm
RoHS StatusNon-RoHS Compliant
In-Stock:4546 items

IR2011 Product Details

IR2011 Description


The IR2011 is a high-speed, high-power MOSFET driver with separate high and low side referenced output channels. Down to 3.0V logic, logic inputs are compatible with normal CMOS or LSTTL output. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. The propagation delays are matched to make high-frequency applications easier to employ. The floating channel can be utilized to drive a high-side N-channel power MOSFET that operates at 200 volts. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology.



IR2011 Features


  • Negative transient voltage tolerant, dV/dt immune

  • The supply voltage for gate drives ranges from 10 to 20 volts.

  • Low and high side channels that are independent

  • HIN/LIN active high input logic

  • Both channels are undervoltage locked.



IR2011 Applications


  • Converters

  • DC motor control



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