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IPW60R031CFD7XKSA1

IPW60R031CFD7XKSA1

IPW60R031CFD7XKSA1

Infineon Technologies

IPW60R031CFD7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPW60R031CFD7XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2014
Series CoolMOS™ CFD7
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 278W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation278W
Turn On Delay Time48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 32.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.63mA
Input Capacitance (Ciss) (Max) @ Vds 5623pF @ 400V
Current - Continuous Drain (Id) @ 25°C 63A Tc
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 175 ns
Continuous Drain Current (ID) 63A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 277A
Avalanche Energy Rating (Eas) 326 mJ
Max Junction Temperature (Tj) 150°C
Height 25.4mm
RoHS StatusROHS3 Compliant
In-Stock:626 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.452800$10.4528
10$9.861132$98.61132
100$9.302955$930.2955
500$8.776372$4388.186
1000$8.279597$8279.597

IPW60R031CFD7XKSA1 Product Details

IPW60R031CFD7XKSA1 Description


IPW60R031CFD7XKSA1 is a 600VCoolMOSaCFD7 Power Transistor.


IPW60R031CFD7XKSA1 Features

? High-speed bodydiode? Low-cost entry

? Top-of-the-line reverse-recoverycharge (Qrr)

? Enhanced MOSFET reversediodedv/dtanddiF/dtruggedness

? FOMRDS(on)*QgandRDS(on)*Eoss lowest

? Top-of-the-line RDS(on)inSMDandTHDpackages


IPW60R031CFD7XKSA1 Applications

?Excellent hard commutation ruggedness


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