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IPUH6N03LB G

IPUH6N03LB G

IPUH6N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A IPAK

SOT-23

IPUH6N03LB G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2008
Series OptiMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 83W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:3861 items

About IPUH6N03LB G

The IPUH6N03LB G from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 50A IPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPUH6N03LB G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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