IPP200N15N3GXKSA1 Overview
A device's maximum input capacitance is 1820pF @ 75V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.As far as peak drain current is concerned, its maximum pulsed current is 200A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 150V, it supports the maximal dual supply voltage.Its overall power consumption can be reduced by using drive voltage (8V 10V).
IPP200N15N3GXKSA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 23 ns
based on its rated peak drain current 200A.
IPP200N15N3GXKSA1 Applications
There are a lot of Infineon Technologies IPP200N15N3GXKSA1 applications of single MOSFETs transistors.
- Telecom 1 Sever Power Supplies
- DC-to-DC converters
- LCD/LED/ PDP TV Lighting
- Industrial Power Supplies
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Lighting
- Power Management Functions
- Consumer Appliances
