Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPI65R280E6XKSA1

IPI65R280E6XKSA1

IPI65R280E6XKSA1

Infineon Technologies

Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3

SOT-23

IPI65R280E6XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084002g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2008
Series CoolMOS™ E6
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 104W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13.8A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 13.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage650V
Drain-source On Resistance-Max 0.28Ohm
Drain to Source Breakdown Voltage 700V
Avalanche Energy Rating (Eas) 290 mJ
Height 9.45mm
Length 10.36mm
Width 4.52mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3109 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.646357$10.646357
10$10.043734$100.43734
100$9.475220$947.522
500$8.938887$4469.4435
1000$8.432912$8432.912

About IPI65R280E6XKSA1

The IPI65R280E6XKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPI65R280E6XKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News