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IPI037N08N3GHKSA1

IPI037N08N3GHKSA1

IPI037N08N3GHKSA1

Infineon Technologies

MOSFET N-CH 80V 100A TO262-3

SOT-23

IPI037N08N3GHKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package PG-TO262-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2008
Series OptiMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 214W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155μA
Input Capacitance (Ciss) (Max) @ Vds 8110pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
In-Stock:3566 items

About IPI037N08N3GHKSA1

The IPI037N08N3GHKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 80V 100A TO262-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPI037N08N3GHKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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