IPD60R520C6ATMA1 Description
IPD60R520C6ATMA1 is a N-channel Power MOSFET from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IPD60R520C6ATMA1 is -55°C~150°C TJ and its Drain to Source Voltage (Vdss) is 600V. IPD60R520C6ATMA1 has 2 pins and it is available in Tape & Reel (TR) packaging method. The Drain-source On Resistance-Max of IPD60R520C6ATMA1 is 0.52Ohm.
IPD60R520C6ATMA1 Features
Avalanche Energy Rating (Eas): 153 mJ
Pulsed Drain Current-Max (IDM): 22A
Drain Current-Max (Abs) (ID): 8.1A
Drive Voltage (Max Rds On,Min Rds On): 10V
IPD60R520C6ATMA1 Applications
Wearable applications
Low-power wireless applications
Portable products
Battery powered systems