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IPD60R380C6

IPD60R380C6

IPD60R380C6

Infineon Technologies

IPD60R380C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPD60R380C6 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional FeatureHIGH VOLTAGE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 10.6A
Drain-source On Resistance-Max 0.38Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 210 mJ
RoHS StatusROHS3 Compliant
In-Stock:1277 items

Pricing & Ordering

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IPD60R380C6 Product Details

IRFR3910PBF Description

CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.



IRFR3910PBF Features

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Easy to use/drive,Pb-free plating, Halogen free

Fully qualified according to JEDEC for Industrial Applications



IRFR3910PBF Applications

PFC stages, hard switching PWM stages and resonant switching PWM

stages for e.g- PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,

Telecom and UPS.




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