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IPC218N04N3X7SA1

IPC218N04N3X7SA1

IPC218N04N3X7SA1

Infineon Technologies

MOSFET MV POWER MOS

SOT-23

IPC218N04N3X7SA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Transistor Element Material SILICON
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position UNSPECIFIED
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XXUC-N
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.05Ohm
DS Breakdown Voltage-Min 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2459 items

Pricing & Ordering

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About IPC218N04N3X7SA1

The IPC218N04N3X7SA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET MV POWER MOS.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPC218N04N3X7SA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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