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IPC173N10N3X1SA1

IPC173N10N3X1SA1

IPC173N10N3X1SA1

Infineon Technologies

Trans MOSFET N-CH 100(Min)V DIE Wafer

SOT-23

IPC173N10N3X1SA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case Die
PackagingBulk
Published 2013
Series OptiMOS™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150μA
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 1A Tj
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2566 items

About IPC173N10N3X1SA1

The IPC173N10N3X1SA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 100(Min)V DIE Wafer.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPC173N10N3X1SA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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