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IPB072N15N3GE8187ATMA1

IPB072N15N3GE8187ATMA1

IPB072N15N3GE8187ATMA1

Infineon Technologies

MOSFET N-CH 150V 100A TO263-3

SOT-23

IPB072N15N3GE8187ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2011
Series OptiMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 5470pF @ 75V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
In-Stock:3053 items

About IPB072N15N3GE8187ATMA1

The IPB072N15N3GE8187ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 150V 100A TO263-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB072N15N3GE8187ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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