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IPB03N03LA G

IPB03N03LA G

IPB03N03LA G

Infineon Technologies

MOSFET N-CH 25V 80A TO-263

SOT-23

IPB03N03LA G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
Series OptiMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 7027pF @ 15V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:1399 items

About IPB03N03LA G

The IPB03N03LA G from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 25V 80A TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB03N03LA G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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