IP2002 Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
IP2002 Features
100% Tested for High-Voltage Breakdown
Rated 1500 Vrms
High IMR: 140 dB at 60 Hz
Maximum Nonlinearity: 0.010%
Bipolar Operation: VO = ?à10 V
Packages: PDIP-16 and SOIC-28
Ease of Use: Fixed Unity Gain Configuration
Supply Range: ?à4.5-V to ?à18-V
IP2002 Applications
Switching applications
