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IHW30N135R3FKSA1

IHW30N135R3FKSA1

IHW30N135R3FKSA1

Infineon Technologies

IHW30N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW30N135R3FKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2006
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation349W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element ConfigurationSingle
Power Dissipation175W
Input Type Standard
Power - Max 349W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35kV
Max Collector Current 60A
Collector Emitter Breakdown Voltage1.35kV
Voltage - Collector Emitter Breakdown (Max) 1350V
Collector Emitter Saturation Voltage1.85V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 30A
IGBT Type Trench
Gate Charge263nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/337ns
Switching Energy 1.93mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2206 items

Pricing & Ordering

QuantityUnit PriceExt. Price
240$4.28104$1027.4496

IHW30N135R3FKSA1 Product Details

IHW30N135R3FKSA1 Description


IHW30N135R3FKSA1, provided by Infineon Technologies, is a type of reverse-conducting IGBT with a monolithic body diode. Based on TRENCHSTOPTM technology, it is able to deliver high ruggedness, stable temperature behavior, very low VCEsat, and low Eoff, as well as easy parallel switching capability due to the positive temperature coefficient in VCEsat. Therefore, IHW30N135R3FKSA1 IGBT is well suited for a wide range of applications, including inverterized microwave ovens, resonant converters, and more.



IHW30N135R3FKSA1 Features


High ruggedness

Temperature stable behavior

Very low VCEsat and low Eoff

Easy parallel switching capability

Positive temperature coefficient in VCEsat



IHW30N135R3FKSA1 Applications


Inductive cooking

Inverterized microwave ovens

Resonant converters

Soft switching applications


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