IGA30N60H3XKSA1 Description
A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.
IGA30N60H3XKSA1 Features
TRENCHSTOP technology offering·very low turn-off energy·low Vcesat·low EMI
*maximum junction temperature 175°C
*qualified according to JEDEC for target applications
·Pb-free lead plating,halogen-free mould compoundRoHS compliant
*complete product spectrum and PSpice Models
IGA30N60H3XKSA1 Applications
*uninterruptible power supplies welding converters
*converters with high switching frequency
