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IDWD30G120C5XKSA1

IDWD30G120C5XKSA1

IDWD30G120C5XKSA1

Infineon Technologies

1200 V Silicion Carbide Schottky diode in TO-247-2 package

SOT-23

IDWD30G120C5XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-2
Series CoolSiC™+
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 248μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.65V @ 30A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 87A DC
Reverse Recovery Time 0ns
Capacitance @ Vr, F 1980pF @ 1V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:517 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$19.037654$19.037654
10$17.960051$179.60051
100$16.943445$1694.3445
500$15.984382$7992.191
1000$15.079605$15079.605

About IDWD30G120C5XKSA1

The IDWD30G120C5XKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features 1200 V Silicion Carbide Schottky diode in TO-247-2 package.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IDWD30G120C5XKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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