FZ750R65KE3C1NOSA1 Description
The FZ750R65KE3C1NOSA1 is a highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. The usage of an IGBT power module, which serves as a switch, allows for exceptionally quick and highly energy-efficient power on and off operations. The IGBT power module is quickly replacing other devices in high-power applications because of its improved switching, temperature, weight, and cost performance.
FZ750R65KE3C1NOSA1 Features
Electrical Features
Mechanical Features
Package with CTI>600
Package with enhanced insulation of 10.4kV AC 10s
High creepage and clearance distances
AlSiC base plate for increased thermal cycling capability
Extended storage temperature down to Tstg = -55°C
FZ750R65KE3C1NOSA1 Applications
